型号 SI5435BDC-T1-E3
厂商 Vishay Siliconix
描述 MOSFET P-CH 30V 4.3A 1206-8
SI5435BDC-T1-E3 PDF
代理商 SI5435BDC-T1-E3
产品目录绘图 DC-T1-E3 Series 1206-8
标准包装 1
系列 TrenchFET®
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 4.3A
开态Rds(最大)@ Id, Vgs @ 25° C 45 毫欧 @ 4.3A,10V
Id 时的 Vgs(th)(最大) 3V @ 250µA
闸电荷(Qg) @ Vgs 24nC @ 10V
功率 - 最大 1.3W
安装类型 表面贴装
封装/外壳 8-SMD,扁平引线
供应商设备封装 1206-8 ChipFET?
包装 剪切带 (CT)
产品目录页面 1664 (CN2011-ZH PDF)
其它名称 SI5435BDC-T1-E3CT
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